Abstract

An experiment was run to determine the ability of surfactants to reduce or remove scum produced during development of a positive resist. Anionic, cationic and nonionic surfactants were added to a low metal ion developer at concentrations between 0.025% and 0.57o. The film thickness loss due to development was measured, and image profiles were observed with scanning electron micrographs . Of the surfactants tried, Aerasol OT-75 (dioctyl ester of sodium sulfosuccinic acid) produced the best results, 9.57o film thickness loss with little image profile change. However, the experiment was limited by processing condition variables.

Library of Congress Subject Headings

Microelectronics; Semiconductors; Photoresists

Publication Date

5-1-1982

Document Type

Thesis

Student Type

- Please Select One -

Department, Program, or Center

School of Photographic Arts and Sciences (CIAS)

Advisor

Francis, Ronald

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7871.B365 1982

Campus

RIT – Main Campus

Plan Codes

PHIMAG-BFA

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