Abstract
A method was achieved to allow a quantitative and rapid comparison of different anti-reflection coatings (ARC) used under the photoresist layer in semiconductor-device fabrication. The computer algorithm utilizes the spectral irradiance of the source, reflectance of the substrate, absorption of the photoresist and ARC, and the spectral sensitivity of the photoresist to provide a quantitative value of the total system response to reflectance. The algorithm was tested by correlating the resultant value with photoresist resolution on aluminum, polysilicon, and 2nd-oxide process layers, and found to be linear with an R-squared value of 0.99S5 within the region investigated. Subsequent statistical analysis found the results to be significant and repeatable at an alpha level of 0.05.
Library of Congress Subject Headings
Photoresists; Microlithography
Publication Date
4-12-1985
Document Type
Thesis
Department, Program, or Center
School of Photographic Arts and Sciences (CIAS)
Advisor
Burczak, Chip
Advisor/Committee Member
Illegible signature
Recommended Citation
Levine, Neil, "A method for comparison of anti-reflection coatings for photoresist via a simple computer algorithm" (1985). Thesis. Rochester Institute of Technology. Accessed from
https://repository.rit.edu/theses/5065
Campus
RIT – Main Campus
Comments
Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7874.L398 1985