Ian MacKay

Abstract

The history of electroluminescent(EL) device research is reviewed with an emphasis on the polycrystalline materials effort. The mechanism of EL behavior for direct-current(DC) and alternating-current(AC) powder structures as well as thin film devices is summarized. Current AC device characteristics are evaluated and matrix addressing constraints to low power operation are discussed. Alternatives for lower voltage operation including high dielectric strength materials for AC use, and DC device designs are considered. Attempts at the fabrication of a low voltage, pulsed operation, DC device using a sputtered active layer are reported. Limited results are reported due to difficulties with the RF deposition equipment. The results indicate, however, that low voltage DC devices may be possible with sputtered active layers under the proper deposition conditions. A major problem in our active layer films of 250 nm or less thickness appeared to be pinholes causing shorts. In support of the fabrication effort, film thickness determination via interference microscopy is discussed, a pulsed-mode device test circuit is reported, and colorimetric methods for film composition analysis reviewed.

Library of Congress Subject Headings

Thin film devices--Optical properties--Testing; Thin films--Optical properties--Testing; Electroluminescence; Polycrystalline semiconductors; Thin films, Multilayered--Testing

Publication Date

7-31-1989

Document Type

Thesis

Department, Program, or Center

Center for Materials Science and Engineering

Advisor

Lindberg, Vern

Advisor/Committee Member

Hirsh, Merle

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7871.15.F5 M334 1989

Campus

RIT – Main Campus

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