Abstract
The technique of Scanning Tunneling Optical Resonance Microscopy (STORM) has been investigated for use on nanostructures. It has been demonstrated as a viable technique to characterize both bulk and nanostructured materials by optically pumping the tip-sample junction with variable energy photons thereby changing the electronic signature in the scanning tunneling microscope allowing for the determination of the local absorption spectrum. STORM offers an alternative technique to characterize very small structures that lie beyond the limits of more conventional approaches.
Library of Congress Subject Headings
Scanning tunneling microscopy; Quantum dots; Indium arsenide
Publication Date
6-1-2008
Document Type
Thesis
Department, Program, or Center
Chester F. Carlson Center for Imaging Science (COS)
Advisor
Raffaelle, Ryne
Advisor/Committee Member
Hailstone, Richard
Advisor/Committee Member
Kotlarchyk, Michael
Recommended Citation
Byrnes, Daniel P., "Scanning tunneling optical resonance microscopy applied to indium arsenide quantum dot structures" (2008). Thesis. Rochester Institute of Technology. Accessed from
https://repository.rit.edu/theses/2941
Campus
RIT – Main Campus
Comments
Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: QH212.S35B97 2008