Abstract

III-Nitrides show tremendous promise for a wide range of laser diodes and other optoelectronics devices. The wide range of emission wavelengths possible makes these devices ideal candidates for a wide range of applications. Despite this, several challenges remain unsolved, limiting the efficiency and output power from III-Nitride optoelectronics. Three of the most significant remaining challenges surround the formation of low resistance ohmic electrical contacts, poor p-type doping of III-Nitride crystals as well, and the fabrication of the smooth, mirror facets needed for optical feedback and laser operation. Inefficient dopant activation leads to poor conductivity and increased electrical resistance due to higher Schottky barrier height, requiring the use of multi-layered metal structures. The high chemical resistance of III-Nitride crystals also presents challenges. Device fabrication is typically accomplished through dry etching processes, while effective for top-down fabrication, the resulting etched sidewalls typically are typically rough, damaged, and non-vertical following completion of the etch. This roughness then leads to optical scattering and severely decreased device performance. Solutions to these challenges are investigated in this work, culminating in the fabrication of the first blue and near-ultraviolet III-Nitride edge-emitting laser diodes fabricated at RIT.

Publication Date

6-16-2026

Document Type

Dissertation

Student Type

Graduate

Degree Name

Microsystems Engineering (Ph.D.)

Department, Program, or Center

Microsystems Engineering

College

Kate Gleason College of Engineering

Advisor

Jing Zhang

Advisor/Committee Member

Stefan Preble

Advisor/Committee Member

Sean Rommel

Campus

RIT – Main Campus

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