Abstract
Managing thermal energy generation and heat transfer within nanoscale devices (transistors) of modern-day electronics is important as it limits speed, carrier mobility, and affects device reliability. In the nanoscale, heat conduction occurs primarily via phonon transport and heat generation is a result of electron-phonon interactions in these devices. Traditional methods of predicting physical behavior have proven to lack either physical accuracy, computational efficiency, or flexibility. The Nanoscale Energy Transport Model (NETM) is an engineering design tool introduced to calculate non-equilibrium transport of energy carriers in nanoscale devices and overcome the deficiencies of traditional models of energy-carrier transport The NETM previously had a rudimentary model to represent heating from electron-phonon interactions. This thesis builds a foundation for a more detailed representation of the transport and interaction of electrons and phonons with three major goals. First, to create a method of calculating equilibrium energy carrier concentrations across the first conduction band electronic structure for a silicon lattice and implement it into the NETM. Second, to create a preliminary model to calculate the effect of N-type dopant on the energy carrier concentration within the silicon lattice. And third, to do a wavevector space mesh sensitivity on the possible electron-phonon interactions subject to energy and momentum selection rules. The model implementation results compare well to similar methods in the literature. This forms the basis of the implementation of Fermi’s golden rule for the electron-phonon scattering rate computation and can lead to a full joule heating model.
Publication Date
5-6-2024
Document Type
Thesis
Student Type
Graduate
Degree Name
Manufacturing and Mechanical Systems Integration (MS)
Department, Program, or Center
Manufacturing and Mechanical Engineering Technology
College
College of Engineering Technology
Advisor
Michael P. Medlar
Advisor/Committee Member
Santosh K. Kurnick
Advisor/Committee Member
Martin K. Anselm
Recommended Citation
Velez, Dominick, "Electron Counting, Dopant Implementation, & Electron Phonon Interaction Mesh Sensitivity Testing for Nanoscale Energy Transport Model" (2024). Thesis. Rochester Institute of Technology. Accessed from
https://repository.rit.edu/theses/11763
Campus
RIT – Main Campus
