Abstract
The functionality of MOSFETs makes them a crucial component in modern electrical engineering. These devices play a fundamental role in a wide range of applications. Understanding the behavior and characteristics of MOSFETs is essential for their effective utilization in circuit design. One crucial parameter that significantly impacts MOSFET performance is voltage gain. It represents the ratio of output voltage to input voltage and varies depending on the circuit configuration employed. When selecting a MOSFET for a specific circuit, understanding the parameters and characteristics that influence voltage gain becomes crucial. This research project aims to delve into the realm of MOSFETs, investigating, simulating, and testing various parameters that influence their performance. The study will encompass a broad spectrum of factors.
Publication Date
5-2024
Document Type
Master's Project
Student Type
Graduate
Degree Name
Electrical Engineering (MS)
Department, Program, or Center
Electrical and Microelectronic Engineering, Department of
College
Kate Gleason College of Engineering
Advisor
Mark A. Indovina
Advisor/Committee Member
Ferat Sahin
Recommended Citation
Greenfield, Elaine, "A Comprehensive Study of Gain Characterization in MOSFETs" (2024). Thesis. Rochester Institute of Technology. Accessed from
https://repository.rit.edu/theses/11715
Campus
RIT – Main Campus