Abstract
Thin film III-V photovoltaics (PV) are a high efficiency, low weight alternative to silicon. However, high costs make practical use cases limited to weight specific applications. These high costs are largely contained in material costs and especially thick substrates used as seed and handle layers for devices grown atop them. Removal and reuse of the substrates post device growth leads to a significant reduction in the material cost to make these devices. Acoustic assisted spalling (Sonic Wafering) is a low-cost substrate removal method that has the potential to significantly reduce costs related to the fabrication of III-V PVs. This thesis outlines design considerations and material characterization comparison of III-V devices made conventionally without substrate removal with those made using acoustic assisted spalling. The viability of SiOx nanoparticles as a release assist layer is also investigated. This investigation was in collaboration with researchers at Arizona State University (ASU), researchers at the National Renewable Energy Laboratory (NREL), and in conjunction with Crystal Sonic, all sponsored by the DOE under grant number DE-FOA-0002064. 3-4% surface coverage of nanoparticles prior to test structure overgrowth leads to small decreases in photoluminescence (80% of control) whereas 30% surface coverage drastically decreases photoluminescence (
Library of Congress Subject Headings
Photovoltaic power generation; Thin films; Nanoparticles
Publication Date
7-16-2021
Document Type
Thesis
Student Type
Graduate
Degree Name
Physics (MS)
Department, Program, or Center
School of Physics and Astronomy (COS)
Advisor
Seth Hubbard
Advisor/Committee Member
Michael Pierce
Advisor/Committee Member
Santosh Kurinec
Recommended Citation
Smith, David, "Effect of Nanoparticle and Acoustic Assisted Spalling on III-V Thin Film Photovoltaic Device Characteristics" (2021). Thesis. Rochester Institute of Technology. Accessed from
https://repository.rit.edu/theses/10930
Campus
RIT – Main Campus
Plan Codes
PHYS-MS