Abstract

Gallium nitride (GaN) devices are of particular interest for a variety of fields and application spaces. The materials properties of GaN make it an ideal semiconductor for electronics and optoelectronics. Within electronics, GaN is of great interest for high-power and high-frequency electronics. Within optoelectronics, GaN has enabled efficient lighting and continues to be scaled for augmented reality and virtual reality (AR/VR) application spaces through the realization of micro-LEDs. In scaling such devices for incorporation into larger systems that span multiple fields, monolithically integrating other devices and components would provide greater flexibility and improve system-level performance. One such avenue for explored here is the development and integration of a GaN-based memory device with a light-emitting diode (LED). Specifically, a nanowire memory device integrated vertically with an LED.

Initial work involved developing and verifying a high-κ dielectric memory stack on Si for memory characteristics. This was followed by fabrication of the integrated memory device and LED on a green LED GaN-on-sapphire substrate through a top-down approach. Initial electrical testing showed a functional, blue-shifted LED and the existence of a 2.5V memory window for a +/-10V program/erase window. Finally, a new self-limiting etch technique was examined to address possibilities for further scaling nanowires.

Library of Congress Subject Headings

Nanowires--Materials; Gallium nitride; Ferroelectric storage cells

Publication Date

5-11-2021

Document Type

Thesis

Student Type

Graduate

Degree Name

Microelectronic Engineering (MS)

Department, Program, or Center

Microelectronic Engineering (KGCOE)

Advisor

Jing Zhang

Advisor/Committee Member

Robert Pearson

Advisor/Committee Member

Karl Hirschman

Campus

RIT – Main Campus

Plan Codes

MCEE-MS

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