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KTI-820, a positive photoresist was hardened utilizing two different methods. The PRIST technique involved the exposure of the patterned resist to a plasma containing CF4 plus Helium followed by a 210C, 30 mm postbake. The RHCM technique involved the encapsulation of the patterned resist with a PMMA mold followed by a 210C, 30 mm postbake and subsequent PMMA removal. The performance of hardened structures on multilayer substrates was investigated for both dry etching and ion implantation processes. The results indicate that the RHCM technique is the superior method. Scanning electron micrographs showed a minimum amount of pattern distortion while nanoline measurements show a minimum change in linewidth dimension.

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