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This research looks at the design and fabrication of sub 100-nm carbon nanotube-based vacuum field emission devices. The devices in this project are based in the Fowler-Nordheim emission of electrons, which allow the devices to hold radiation hardened capabilities due the absence of a semiconductor channel. On top of the radiation hardened capabilities of the Vacuum FETS, the emitter material, SWCNT (Single-Wall Carbon Nanotubes) themselves hold radiation hardened capabilities. SWCNT could also be the nanomaterial that replaces silicon in CMOS FETs (Field-Effect- Transistors). Through extensive preparation and testing, a field emission device based on carbon nanotube emitters with an effectiv anode-to-cathode distance of 100 nm was designed, fabricated, and tested.

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