Publication Date
4-17-2018
Document Type
Presentation
Recommended Citation
Eschle, Joshua L.
(2018)
"Annealing Study of ALD Deposited Ferroelectric Aluminum-doped Hafnium Oxide,"
Journal of the Microelectronic Engineering Conference: Vol. 24:
Iss.
1, Article 21.
Available at:
https://repository.rit.edu/ritamec/vol24/iss1/21