Ferroelectric memory shows great promise as a high speed alternative to conventional memory architectures. Traditionally this memory has been constrained to niche applications duetothelargesizeofceramic-basedferroelectricdevices.Doped hafnium dioxide measured on a newly-acquired aixACCT TF Analyzer 1000 is shown to have ferroelectricity an order of magnitude stronger than discrete PZT ﬁlms that were measured, enabling further scaling while also simplifying fabrication via the elimination of ceramics from the process ﬂow. Additionally, the presence of a TiN capping layer as well as a lower temperature, long duration anneal are shown to be key in obtaining a potential ferroelectric phase in hafnium dioxide.
Anderson, Jackson D.
"Ferroelectric Hafnium Dioxide Thin Films,"
Journal of the Microelectronic Engineering Conference: Vol. 21:
1, Article 4.
Available at: https://repository.rit.edu/ritamec/vol21/iss1/4