Amorphous carbon may be used as a hard mask alternative to nitride in conjunction with multiple patterning lithography and line-width trimming applications. This work focuses on the simulation and deposition for optical optimization of a carbon hard mask using plasma enhanced chemical vapor deposition (PECVD). By creating a central composite design centered about pressure, power, and gas ﬂow and analyzing the results, it was found that the optical parameters were dependent primarily on power and chamber pressure while the deposition rate varied with all three parameters. This ﬁlm can enable sublithographic patterning of lines approaching 100 nm using an i-line (365 nm) stepper.
Horn, Timothy D.
"Amorphous Carbon Hard Mask for Multiple Patterning Lithography,"
Journal of the Microelectronic Engineering Conference: Vol. 21:
1, Article 1.
Available at: https://repository.rit.edu/ritamec/vol21/iss1/1