Surface Cleaning of III-V PIN Diodes to Reduce I0 for TFET Applications

Authors

Ian R.T Manwaring

Publication Date

2014

Document Type

Paper

Abstract

The effect of surface cleaning and passivation techniques on the reverse bias saturation current Jo of In_0.53Ga_0.47As PIN diodes was investigated. The primary surface clean and passivation chemistries used were an HCI/D.I. H₂O solution, and an (NH₄)₂S solution, respectively. The effect of a Benzocyclobutene (BCB) capping layer, along with the influence of the BCB adhesion promoter was also investigated. It was found that the use of the surface clean and sulfide passivation reduced I₀ by over an order of magnitude, while also drastically tightening the overall distribution of I₀ values over approximately 120 devices of different dimensions, when compared with devices without surface treatments. The use of BCB as a capping layer was seen to keep the distribution of I₀ values tight over time, implying that it can effectively cap a surface that has been passivated with sulfur.

Recommended Citation

Manwaring, Ian R.T (2014) "Surface Cleaning of III-V PIN Diodes to Reduce I0 for TFET Applications," Journal of the Microelectronic Engineering Conference: Vol. 20: Iss. 1, Article 6.
Available at: https://repository.rit.edu/ritamec/vol20/iss1/6