Optimization of ALD High-K Dielectrics via C-V Analysis

Authors

William Abisalih

Publication Date

2014

Document Type

Paper

Abstract

As device scaling is an ever present concern in semiconductor manufacturing, the need for thin, conformal films with which to fabricate these devices is paramount. One technology that appears prominently placed to fill this need is Atomic Layer Deposition. This work presents a study on atomic layer deposited alumina (Al₂O₃), hafnia (HfO₂), and silicon dioxide (SiO₂) as dielectric materials characterized using capacitance-voltage (CV) analysis. MOS capacitors were fabricated utilizing various combinations of alumina or hafnia and silicon dioxide as an interfacial layer. Each dielectric film was characterized optically to determine the thickness, and then CV analysis was performed on each device. The results showed that the dielectric and interface quality of Al₂O₃ on bare silicon was superior to HfO₂ on bare silicon. However the performance of Al₂O₃ devices dropped with the addition of interfacial SiO₂, while the performance of the HfO₂ devices was greatly enhanced. The treatment that had HfO₂ with a monolayer of interfacial SiO₂ on silicon produced the best results.

Recommended Citation

Abisalih, William (2014) "Optimization of ALD High-K Dielectrics via C-V Analysis," Journal of the Microelectronic Engineering Conference: Vol. 20: Iss. 1, Article 1.
Available at: https://repository.rit.edu/ritamec/vol20/iss1/1