Deep Submicron III-V on Si-Based Esaki Diode

Authors

K L. Johnson
S L. Rommel
M Barth
D Pawlik
P Thomas

Publication Date

2010

Document Type

Paper

Abstract

Esaki tunneling diodes are reemerging as a viable technology option in helping to improve speed and performance of many high speed device applications. The revival of this technology may be linked to the development of new substrates available to research that allows for the fabrication of a device comparable to current silicon technology. Using a 111-V on Silicon Substrate, it was demonstrated that it is possible to create working Esaki Tunneling Diodes.

Recommended Citation

Johnson, K L.; Rommel, S L.; Barth, M; Pawlik, D; and Thomas, P (2010) "Deep Submicron III-V on Si-Based Esaki Diode," Journal of the Microelectronic Engineering Conference: Vol. 19: Iss. 1, Article 9.
Available at: https://repository.rit.edu/ritamec/vol19/iss1/9