Publication Date
2010
Document Type
Paper
Abstract
A method for simulating dopant activation at low temperatures is proposed and tested, with a proof of concept showing the expected behavior implemented.
Recommended Citation
Driscoll, James D.
(2010)
"Modeling and Simulation of Low Temperature Activation Processes,"
Journal of the Microelectronic Engineering Conference: Vol. 19:
Iss.
1, Article 11.
Available at:
https://repository.rit.edu/ritamec/vol19/iss1/11