Investigating the Coefficient of Thermal Expansion of PECVD TEOS SiO2 on Silicon

Authors

Justin DelMonte

Publication Date

2010

Document Type

Paper

Abstract

The goal of the experiment was to determine the coefficient of thermal expansion for PECVD TEOS on SiO₂ on silicon using surface machined MEMS. Two different devices were used to investigate the property along with an available environmental chamber and an optical interferomeler. One device yielded no results and the other device needs tuning to yield more accurate results. The investigation as a whole proved that the methodology works should devices be obtained or fabricated that could measure what is necessary to calculate the coefficients accurately.

Recommended Citation

DelMonte, Justin (2010) "Investigating the Coefficient of Thermal Expansion of PECVD TEOS SiO2 on Silicon," Journal of the Microelectronic Engineering Conference: Vol. 19: Iss. 1, Article 10.
Available at: https://repository.rit.edu/ritamec/vol19/iss1/10