A well understanding of basic structure of Double Diffused Metal Oxide Semiconductor (DMOS) and the concept of segmented large capacitor creates possibility to produce a full-wafer DMOS. Using the Mylar Mask Technology, the final metal layer can be patterned accordingly so that to leave out any damaged fragments. Thus, it will increase the possibility of higher yield. Most of the basic fabrication processes will be done at RIT microelectronics lab facilities, and the functionality tests will be conducted at Naval Research Lab. Therefore, this paper is intended to give a general overview of concepts involved and the fabrication processes.
Sudirgo, Stephen and Pamatat, Alex
"Full-Wafer DMOS Fabrication at RIT,"
Journal of the Microelectronic Engineering Conference: Vol. 11:
1, Article 18.
Available at: https://repository.rit.edu/ritamec/vol11/iss1/18