Fabrication and Characterization of 6H-SiC Photovoltaic Devices

Authors

Russell P. Ott

Publication Date

2001

Document Type

Paper

Abstract

Silicon Carbide (SIC) photovoltaic (PV) devices have caught the interest for extra terrestrial endeavors. This is due to the excellent resistance to radiation, good thermal conductivity, and high quantum efficiency of such devices. Also the large band gap (of 2.9eV) makes it ideal for gathering high-energy UV photons thus creating a large power density. Using 1cm² 6H-SiC diode samples, photovoltaic cells were produced. Both P-on-N and Non- P were examined for this study. There are two samples for each type with varying doping concentrations. For the n-side of each sample, a multilayer of TiINiIAl metals was deposited to have ohmic contact to the substrate. For the p-side, Al metal was deposited. A spectral response will be studied on these devices in the 200-400nm range and quantum efficiency will be determined for an AMO (atmosphere in space) spectral output. The devices will also be tested over a range of temperatures to see how efficiency changes. Other responses that will be characterized are maximum power output, fill factor, built-in forward bias voltage, breakdown voltage, and the dark leakage current. Combining all of the above responses will help in optimizing photovoltaic devices to best serve the needs of power and efficiency.

Recommended Citation

Ott, Russell P. (2001) "Fabrication and Characterization of 6H-SiC Photovoltaic Devices," Journal of the Microelectronic Engineering Conference: Vol. 11: Iss. 1, Article 16.
Available at: https://repository.rit.edu/ritamec/vol11/iss1/16