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As RIT is continuously scaling CMOS technology to smaller dimension, the Self-Aligned Suicide (Salicide) process needs to be developed. The silicided metalization leads to low-resistivity gates, interconnections and contacts between the metal and silicon substrate. Currently, salicide processes, such as titanium silicide (TiSi2) and cobalt suicide (CoSi2), are widely used in advanced CMOS technologies. However, only CoSi2 salicide process is scalable to deep sub-micron technology, since the resistivity of CoSi2 phase is independent of the dimensions. CoSi2 salicide process using titanium nitride (TiN) as capping film has been developed. Electrical tests were performed: low resistivity of the CoSi2 and negligible leakage current between gate and source/drain were measured. However, the films showed the presence of cobalt oxide, which might have been incorporated during sputtering step.

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