Description
An approach to measurement of resist CD response to image modulation and dose is presented. An empirical model with just three terms is used to describe this response, allowing for direct calculation of photoresist modulation curves. A thresholded latent image response model has been tested to describe CD response for both 90 nm and 45 nm geometry. An assumption of a linear optical image to photoresist latent image correlation is shown as adequate for the 90 nm case, while the 45 nm case demonstrates significant non-linear behavior. This failure indicates the inadequacy of a “resist blur” as a complete descriptive function and uncovers the need for an additional spread function in OPE-style resist models.
Date of creation, presentation, or exhibit
3-20-2006
Document Type
Conference Paper
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Recommended Citation
Anatoly Bourov, Stewart A. Robertson, Bruce W. Smith, Michael Slocum, Emil C. Piscani, "Experimental measurement of photoresist modulation curves", Proc. SPIE 6154, Optical Microlithography XIX, 61542Z (20 March 2006); doi: 10.1117/12.657608; https://doi.org/10.1117/12.657608
Campus
RIT – Main Campus
Comments
Copyright 2006 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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