Description
Immersion interferometric lithography has been applied successfully to semiconductor device applications, but its potential is not limited to this application only. This paper explores this imaging technology for the production of three-dimensional nano-structures using a 193 nm excimer laser and immersion Talbot interferometric lithographic tool. The fabrication of 3-D photonic crystals for the UV spectrum is still considered to be a challenge. A systematic analysis of immersion lithography for 3-D photonic crystal fabrication will be provided in this paper. Significant progress has been made on optical immersion lithography since it was first proposed. Two-beam immersion interferometric lithography can provide sub-30nm resolution. By changing the exposure parameters, such as the numerical aperture of the exposure system, the polarization states and wavelength of the illumination source, 30 nm polymeric nanospheres with different crystal structures can be fabricated.
Date of creation, presentation, or exhibit
3-21-2006
Document Type
Conference Paper
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Recommended Citation
Jianming Zhou, Yongfa Fan, Bruce W. Smith, "Three-dimensional imaging of 30-nm nanospheres using immersion interferometric lithography", Proc. SPIE 6154, Optical Microlithography XIX, 61544M (21 March 2006); doi: 10.1117/12.656544; https://doi.org/10.1117/12.656544
Campus
RIT – Main Campus
Comments
Copyright 2006 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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