A chemical vapor deposition reactor has been designed, built, and optimized for the deposition of copper thin films. The single wafer, stagnation point flow reactor features: six inch substrate capacity; direct metering and vaporization of liquid precursor; reactant introduction into the reactor chamber through a multi-zone precursor injection manifold; optional variable power (0-300W) RF plasma assist; manual loadlock; and, a computer control interface. Substrate temperature uniformity has been measured to be better than 1% across the substrate over a wide range of temperatures. The injection manifold was designed for precise tailoring of gas flow characteristics across the substrate, incorporating four concentric, independently adjustable zones, each of which is controlled by a metering valve. Both Cu(I) trimethylvinylsilane hexaf luoroacetylacetonate (tmvs hfac) and Cu(II) hfac precursor chemistries have been used. Film properties were determined by four-point probe, surface profilometer, and scanning electron microscope (SEM). The Cu(I) tmvs hfac chemistry yielded the best results with deposition rates exceeding lOOOA/min, average film resistivities below 1.80 ^Q*cm, excellent step coverage, and complete gap fill.

Library of Congress Subject Headings

Vapor-plating; Thin films--Materials; Copper

Publication Date


Document Type


Department, Program, or Center

Mechanical Engineering (KGCOE)


Scanlon, M.

Advisor/Committee Member

Ghoneim, H.

Advisor/Committee Member

Omstead, T.


Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TS695.S73 1994


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