The incorporation of high power devices on the same chip as that of the circuitry controlling the high power device has been shown to provide several major advantages over discrete and multichip module designs. The major focus of this work is the development of lateral high power devices that are compatible with R.I.T.'s low power CMOS process. The thrust of this study is to evaluate the feasibility of fabricating Power Integrated Circuits at R.I.T's semiconductor die manufacturing laboratory. As part of the development, several types of high power devices were investigated and the Power MOSFET and IGBT were chosen to be fabricated. The Power MOSFET and IGBT were chosen because they were the least complicated and would provide the greatest probability of functionality. The bulk of the work involved studying the effect of the field plate overlap on the breakdown voltage and the on state resistance. The basic process needed to fabricate the power device was designed and a SUPREM 4 simulation has been generated. The designed process produced a power MOSFET with a breakdown voltage of 50 volts and an operating current of nearly 0.5 amps with an on state resistance of 35Q, while maintaining the standard CMOS operating characteristics for the low power devices. The results are discussed and recommendation for future work at R.I.T. are provided.

Library of Congress Subject Headings

Power electronics; Integrated circuits; Electronic apparatus and appliances--Power supply; Power semiconductors

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Document Type


Department, Program, or Center

Electrical Engineering (KGCOE)


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Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7881.15 .T342 1994


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