The phosphorus planar diffusion source, PH-1000N, was used to test the ability of the process simulation program SUPREM-H to accommodate solid source diffusion. Spreading resistance analysis and secondary ion mass spectrometry (SIMS) were used to determine the impurity concentration profiles of phosphorus diffused into p-type silicon. Sheet resistance and junction depth data, in addition to the impurity concentration profiles, were plotted against the respective data generated by SUPREM. The surface gas concentration, a parameter requested by SUPREM's input file, was found to have the strongest influence on the program's output. The solid solubility of phosphorus in silicon at process temperatures 950C, 975C, and 1000C was used as the initial surface gas concentration. The results given by SUPREM overestimated the sheet resistance by approximately 5 2/sq and underestimated the junction depth by .2 microns. A constant surface gas concentration of 8.5xl020 atoms/cm3 was used as input to improve the correlation between the predicted junction depth and the data obtain by the spreading resistance analysis. This improvement came at the expense of lost accuracy between the predicted and experimental concentration profiles. The best all around correlation between the theoretical output and the experimental data was obtained when the surface concentration parameter was extracted directly from the SIMS data.

Library of Congress Subject Headings

Integrated circuits--Very large scale integration--Materials; Integrated circuits--Very large scale integration--Design and construction--Simulation methods; Silicon; Phosphorus

Publication Date


Document Type


Department, Program, or Center

Electrical Engineering (KGCOE)


Jackson, Michael

Advisor/Committee Member

Fuller, Lynn

Advisor/Committee Member

Turkman, Renen


Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7874.75.W534 1992


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