Each year semiconductor manufacturers spend millions of dollars in the development of new products. It can be very costly to create on silicon a newly developed circuit, especially if it is not very manufacturable or poorly designed. To eliminate risk it is of utmost importance that circuit simulation be done correctly in the early stages of development. Simulation can only be as good as the model being used. Almost all designers whether digital, analogue, or mixed mode use SPICE to simulate their circuits. SPICE accuracy is inherently dependent on the discrete element models being used, i.e. transistors, diodes, mosfets. Development of models usually includes physical measurements, SPICE parameter extraction from the measurement data, and then SPICE simulation to verify the extracted model parameters. This can be a tedious and time consuming process. To speed up this process as well as make it much easier to accomplish, a computer program has been written to aid in the extraction of SPICE parameters for bipolar transistors. To use the program all that is needed is Gummel-Poon data, collector current vs collector-emitter bias voltage data, junction capacitance vs voltage data, and Ft vs collector current data. The user can then methodically choose a parameter of interest and vary the value and immediately see the effect on simulation on screen in a graphical presentation. The user has the ability to simulate each of the above mentioned measurements and view the simulation simultaneously with the data. Using this technique the user can develop the entire SPICE model, including temperature effects and gain a very good working knowledge of parameter effects on the SPICE simulation.

Library of Congress Subject Headings

Bipolar transistors--Design and construction--Data processing; SPICE (Computer file)

Publication Date


Document Type


Department, Program, or Center

Electrical Engineering (KGCOE)


Fuller, Lynn


Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7871.96.B55D44 1992


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