A procedure is established which will enable the study of contrast and sensitivity characteristics of electron-beam resist materials. The imaging system includes an electron beam-sensitive resist coating on an oxidized silicon substrate exposed with a scanning electron microscope (SEM) and developed in a suitable solvent. The results correlate with published data. A chemically amplified electron-beam resist imaging system is studied using a three level, three factor Box-Behnken design. The effects of postbake temperature, postbake time, and development time on contrast and sensitivity are presented.
Library of Congress Subject Headings
Photoresists; Scanning electron microscopes
Department, Program, or Center
Chester F. Carlson Center for Imaging Science (COS)
Pyles, Randall C., "A Procedure to characterize electron-beam resist using a scanning electron microscope and study of process optimization of an electron beam imaging system using experimental design methods" (1992). Thesis. Rochester Institute of Technology. Accessed from
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