A method for comparison of anti-reflection coatings for photoresist via a simple computer algorithm

Neil Levine

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works in January 2014. Physical copy available through RIT's The Wallace Library at: TK7874.L398 1985


A method was achieved to allow a quantitative and rapid comparison of different anti-reflection coatings (ARC) used under the photoresist layer in semiconductor-device fabrication. The computer algorithm utilizes the spectral irradiance of the source, reflectance of the substrate, absorption of the photoresist and ARC, and the spectral sensitivity of the photoresist to provide a quantitative value of the total system response to reflectance. The algorithm was tested by correlating the resultant value with photoresist resolution on aluminum, polysilicon, and 2nd-oxide process layers, and found to be linear with an R-squared value of 0.99S5 within the region investigated. Subsequent statistical analysis found the results to be significant and repeatable at an alpha level of 0.05.