Abstract

In response to diminishing improvements from transistor scaling, the semiconductor field has shifted its focus to architectural innovation and emerging device technologies. Ferroelectric field-effect transistors (FeFETs) are non-volatile memory elements which offer new opportunities for energy-efficient computing, particularly in compute-in-memory (CIM) architectures. This thesis presents a novel FeFET-based computing cell integrated into a time-domain (TD) computing architecture. The proposed design is evaluated using a device model derived from experimental data and compared with competing non-volatile memory implementations. Results demonstrate improvements in area efficiency and performance, highlighting the potential of the FeFET cell for next-generation TD-CIM systems.

Library of Congress Subject Headings

Field-effect transistors; Ferroelectric crystals; Time-domain analysis; Nonvolatile random access memory

Publication Date

4-2025

Document Type

Thesis

Student Type

Graduate

Degree Name

Electrical Engineering (MS)

Department, Program, or Center

Electrical and Microelectronic Engineering, Department of

College

Kate Gleason College of Engineering

Advisor

Tejasvi Das

Advisor/Committee Member

Corey Merkel

Advisor/Committee Member

Ivan Puchades

Comments

This thesis has been embargoed. The full-text will be available on or around 5/21/2026.

Campus

RIT – Main Campus

Plan Codes

EEEE-MS

Download

Available for download on Thursday, May 21, 2026

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