As they have exhibited great potential for light emitting devices, Gallium Nitride (GaN) nanowire (NW)-based devices have attracted a lot of interest over recent years. Ultra-thin GaN NWs can be used to manufacture many novel devices for future communication and encryption systems, such as single photon emitters (SPEs). However, the conventional growth techniques have limitations in terms of manufacturability, creating the need to explore top-down, etch reliant GaN NW fabrication processes.

This work focuses on improving the fabrication methods for top-down GaN nanowires and lay out a potential process for the manufacturing of SPEs. Using a combination of dry and wet etching, the existing process for top-down GaN nanowire fabrication was improved to achieve features with a sub 50nm diameter. An initial process for SPE manufacturing is proposed and an electrochemical etch setup is introduced to broaden the processing capabilities and applications. Preliminary experiments for these new processes show promising results.

Library of Congress Subject Headings

Electroluminescent devices--Design and construction; Gallium nitride--Electric properties; Nanowires--Design and construction

Publication Date


Document Type


Student Type


Degree Name

Microelectronic Engineering (MS)

Department, Program, or Center

Microelectronic Engineering (KGCOE)


Jing Zhang

Advisor/Committee Member

Karl Hirschman

Advisor/Committee Member

Santosh Kurinec


RIT – Main Campus

Plan Codes