Chemical-mechanical polishing (CMP) of copper with a low dielectric constant polymer as interlevel dielectrics (ILD) has been demonstrated as a viable patterning approach for copper interconnect structures. This paper presents a study of the mechanisms involved in copper CMP when used with a low k ILD. A two-step model of copper CMP involves the mechanical abrasion of the copper surface followed by removal of the abraded material from the vicinity of the surface and has been optimized after rigorous CMP experiments with alternative slurries.
Brown, Thomas L.
"Chemical-mechanical polishing of copper with a low K Polymer interlevel dielectric,"
Journal of the Microelectronic Engineering Conference: Vol. 6:
1, Article 7.
Available at: https://repository.rit.edu/ritamec/vol6/iss1/7