In this study an attempt has been made to investigate the effect of intentional doping of hydrogen near the Si/SiO2 interface by ion implantation. MOS capacitors were fabricated with a composite stacked dielectric of thermally grown SiO2 and LPCVD nitride with and without H-implantation. Poly gate capacitors fabricated on both N and P type silicon wafers showed no significant change with hydrogen implant. Effect of hydrogen was distinct in aluminum gate structures.
"Role of Hydrogen at the Si/SiO2 Interface on MOS CV Characteristics,"
Journal of the Microelectronic Engineering Conference: Vol. 6:
1, Article 13.
Available at: https://repository.rit.edu/ritamec/vol6/iss1/13