The effects of premetalization cleaning on electromigration in Al-Si thin films was studied. Premetalization cleaning, divided into a standard RCA clean, DC glow discharge plasma clean, and no clean, were performed on oxide and polysilicon substrates Test structures were subjected to high current densities of 10e6 A/cm2 and monitored for changes in current resulting from electromigration induced defects. The test station employed in this experiment was subject to current losses which the 5Oftware erroneously interpreted as electromigration failures, thus completing the test.
Stubler, Peter R.
"The Effects of Premetalization Clean on Electromigration in Al-Si Thin Films on Si02 and Polysilicon Substrates,"
Journal of the Microelectronic Engineering Conference: Vol. 4:
1, Article 37.
Available at: https://repository.rit.edu/ritamec/vol4/iss1/37