An array of photodiodes consisting of various areas and/or metallization schemes were fabricated for use in a photodiode array. The two gate metals used were Aluminum and Aluminum/Ytterbium. The standard RIT PMOS process was modified to obtain a shallow junction depth for the photodiode. All the diodes generated a photocurrent when illuminated, but the Aluminum metal scheme produced better results due to higher open circuit voltages and short circuit currents. The fill factor was also much better on these diodes.
"Design and Fabrication of a PN Junction Photodiode Array,"
Journal of the Microelectronic Engineering Conference: Vol. 4:
1, Article 34.
Available at: https://repository.rit.edu/ritamec/vol4/iss1/34