A phase shifting mask, to be used for the purpose of improving the resolution of a projection lithography system, was fabricated. This type of mask consists of line-space pairs in which every other aperture induces a 180 degree phase shift in the transmitted radiation. In order to obtain this phase shift there must be a thickness difference between the apertures. Etching of the glass mask plate in 3:100 HF to DI water was used to obtain the required • etch depth.
Apelgren, Eric M.
"Increasing the Practical Resolution of Projection Lithography Using a Phase-Shifting Mask,"
Journal of the Microelectronic Engineering Conference: Vol. 4:
1, Article 1.
Available at: https://repository.rit.edu/ritamec/vol4/iss1/1