This paper details the design and fabrication of memristors in the RIT Semiconductor and Microsystem Fabrication Laboratory. Two methods of partially oxidizing titanium were explored, reactive sputtering and thermal oxidation. It is determined that thermal oxidation allows for greater control over the oxidation process due to an inability to sufficiently control the gas flow in the sputter chamber. Electron beam lithography is used to define holes in oxide in which the memristors will be fabricated. Due to issues with the lithography, fabrication is incomplete and ongoing.
Nagourney, Tal R.
"Design and Fabrication of Memristors,"
Journal of the Microelectronic Engineering Conference: Vol. 19:
1, Article 18.
Available at: https://repository.rit.edu/ritamec/vol19/iss1/18