A flexible low frequency measurement system was set up for providing high quality low frequency C-V curves suitable for analysis and a method is described to analyze the low frequency C-V response for surface state density calculations. This method was used to calculate surface densities over a large portion of the band gap for several MOS capacitors.
Myers, Gregg R.
"A Low Frequency C-V Measurement Technique and Analysis for Surface State Density Determination,"
Journal of the Microelectronic Engineering Conference: Vol. 1:
1, Article 23.
Available at: https://repository.rit.edu/ritamec/vol1/iss1/23